Pressure-induced metallization in the absence of a structural transition in the layered transition-metal dichalcogenide ZrSe 2 .

First-principles calculations were carried out on the ZrSe2 compound, which has been of interest owing to its technologically important physical properties. The structural, electronic and optical properties of this compound were investigated under pressure through the plane wave pseudopotential approach within the framework of density functional theory. A comparison between the computed crystal structure parameters and the corresponding experimental counterparts shows a very good agreement between them. Fitting the pressure-volume data using the third-order Birch-Murnaghan equation of state yielded a bulk modulus B0  = 38.17 GPa and a pressure derivative of bulk modulus B{'_0} = 8.2 for hexagonal ZrSe2 . The relationship between the band structure and pressure is revealed. We calculated the total density of state (TDOS) under different pressures and partial density of state (PDOS) from 0 to 10 GPa. According to our calculations, metallization of hexagonal ZrSe2 is predicted to occur at around 10 GPa and pressure-induced band-gap engineering reveals the transformation of the indirect to direct band gap with increasing pressure. Furthermore, optical properties, such as the complex dielectric function, refractive index and reflectivity spectra of this compound, were studied for incident electromagnetic waves in an energy range up to 45 eV. The contributions to various transition peaks in the optical spectra are analyzed and discussed with the help of the energy-dependent imaginary part of the dielectric function.