A g m /I D -Based Low-Power LNA for Ka-Band Applications.

This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency. The circuit is suitable for Ka-band applications with a central frequency of 28 GHz, as the circuit is intended to operate in the n257 frequency band defined by the 3GPP 5G new radio (NR) specification. The proposed cascode LNA uses the gm/ID methodology in an RF/MW scenario to exploit the advantages of moderate inversion region operation. The circuit occupies a total area of 1.23 mm2 excluding pads and draws 1.98 mW from a DC supply of 0.9 V. Post-layout simulation results reveal a total gain of 11.4 dB, a noise figure (NF) of 3.8 dB, and an input return loss (IRL) better than 12 dB. Compared to conventional circuits, this design obtains a remarkable figure of merit (FoM) as the LNA reports a gain and NF in line with other approaches with very low power consumption.