chalcogenide

Non-layered transition metal carbides (TMCs) and layered transition metal dichalcogenides (TMDs) are two well-studied material families that have individually received considerable attention over the past century. In recent years, with the shift towards two-dimensional materials and heterostructures, a field has emerged that is focused on the structure and properties of TMC/TMD heterostructures, which through chemical conversion exhibit diverse types of heterostructure configuration that host coupled 2D-3D interfaces, giving rise to exotic properties...

Colloidal quantum dots (CQDs) have garnered significant attention in nanoscience and technology, with a particular emphasis on achieving high monodispersity in their synthesis. Recent advances in understanding the chemistry of reaction intermediates such as magic-sized nanoclusters (MSC) have paved the way for innovative synthetic strategies. Notably, monodisperse CQDs of various compositions, including indium phosphide, indium arsenide, and cadmium chalcogenide, have been successfully prepared using nanocluster intermediates as single-source precursors...

One of the main components of the worldwide transition to sustainable energy is solar cells, usually referred to as photovoltaics. By converting sunlight into power, they lessen their reliance on fossil fuels and the release of greenhouse gases. Because solar cells are decentralized, distributed energy systems may be developed, which increases the efficiency of the cells. Chalcogenide perovskites have drawn interest due to their potential in solar energy conversion since they provide distinctive optoelectronic characteristics and stability...

Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2 Se3 and Ge2 Sb2 Se4 Te1 , were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption...

Copper-rich sulfides are very promising for energy conversion applications due to their environmental compatibility, cost effectiveness, and earth abundance. Based on a comparative analysis of the structural and transport properties of Cu3 BiS3 with those of tetrahedrite (Cu12 Sb4 S13 ) and other Cu-rich sulfides, we highlight the role of the cationic coordination types and networks on the electrical and thermal properties. By precession-assisted 3D electron diffraction analysis, we find very high anisotropic thermal vibration of copper attributed to its 3-fold coordination, with an anisotropic atomic displacement parameter up to 0...

Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials...

A fiber probe has been developed that enables simultaneous acquisition of mid-infrared (MIR) and Raman spectra in the region of 3100-2600 cm-1 . Multimodal measurement is based on a proposed ZrO2 crystal design at the tip of an attenuated total reflection (ATR) probe. Mid-infrared ATR spectra are obtained through a pair of chalcogenide infrared (CIR) fibers mounted at the base of the crystal. The probe enables both excitation and acquisition of a weak Raman signal from a portion of the sample in front of the crystal using an additional pair of silica fibers located in a plane perpendicular to the CIR fibers...

In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials...

Antimony selenide (Sb2 Se3 ) consists of 1D (Sb4 Se6 )n ribbons, along which the carriers exhibit high transport efficiency. By adjusting the deposition parameters of vacuum-deposited methods, such as evaporation temperature, chamber pressure, and vapor concentration, it is possible to grow the (Sb4 Se6 )n ribbons vertically or highly inclined towards the substrate, resulting in films with [hk1] orientation. However, the specific mechanisms by which these deposition parameters affect the orientation of thin films require a deeper understanding...

The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs)...

Early transition-metal chalcogenides have garnered recent attention for their optoelectronic properties for solar energy conversion. Herein, the first Zr-/Hf-chalcogenides with a main group cation, Ba9 Hf3 Sn2 Se19 ( 1 ) and Ba8 Zr2 SnSe13 (Se2 ) ( 2 ), have been synthesized. The structure of 1 is formed from isolated SnSe4 4- tetrahedra and distorted HfSe6 octahedra. The latter condense via face-sharing trimeric motifs that are further vertex-bridged into chains of 1 ∞ [Hf(1)2 Hf(2)Se11 ]10- . The structure of 2 is comprised of SnSe4 4- tetrahedra, Se2 2- dimers, and face-sharing dimers of distorted ZrSe6 octahedra...

Pressure-induced transformations in an archetypal chalcogenide glass (GeSe2 ) have been investigated up to 157 GPa by X-ray absorption spectroscopy (XAS) and molecular dynamics (MD) simulations. Ge and Se K-edge XAS data allowed simultaneous tracking of the correlated local structural and electronic changes at both Ge and Se sites. Thanks to the simultaneous analysis of extended X-ray absorption fine structure (EXAFS) signals of both edges, reliable quantitative information about the evolution of the first neighbor Ge-Se distribution could be obtained...

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Herein, using density functional calculations, we studied the substitutional doping in germanene with B, C, N, O, Al, Si, P, S, Ga, As, and Se. Nitrogen is the element that can be more easily incorporated into the germanene lattice, followed by silicon, carbon, and boron. Almost all dopants were efficient in opening a band-gap. Yet, caution should be taken because this opening strongly depends on the dopant concentration. Carbon and sulfur were the most effective elements for band-gap opening. C-doping generates the lowest effective masses (me*/m0=mh*/m0=0...

It is shown that structural disorder-in the form of anisotropic, picoscale atomic displacements-modulates the refractive index tensor and results in the giant optical anisotropy observed in BaTiS3 , a quasi-1D hexagonal chalcogenide. Single-crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS6 chains along the c-axis, and threefold degenerate Ti displacements in the a-b plane. 47/49 Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms...

We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V_{2}MX_{4} (M=W, Mo; X=S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C=-1. The large topological gap originates from the deep band inversion between spin-up bands contributed by d_{xz}, d_{yz} orbitals of V and spin-down band from d_{z^{2}} orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V_{2}MX_{4} is predicted to be much higher than that of monolayer MnBi_{2}Te_{4}...

As typical representatives of group III chalcogenides, InSe, α-In2Se3, and β'-In2Se3 have drawn considerable interest in the domain of photoelectrochemistry. However, the microscopic mechanisms of carrier dynamics in these systems remain largely unexplored. In this work, we first reveal that hot electrons in the three systems have different cooling rate stages and long-lived hot electrons, through the utilization of density functional theory calculations and nonadiabatic molecular dynamics simulations...

Kesterite-based Cu2 ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process...

Supercapacitors are the latest development in the field of energy storage devices (ESDs). A lot of research has been done in the last few decades to increase the performance of supercapacitors. The electrodes of supercapacitors are modified by composite materials based on conducting polymers, metal oxide nanoparticles, metal-organic frameworks, covalent organic frameworks, MXenes, chalcogenides, carbon nanotubes (CNTs), etc. In comparison to rechargeable batteries, supercapacitors have advantages such as quick charging and high power density...

Electrocatalytic water splitting is crucial to generate clean hydrogen fuel, but implementation at an industrial scale remains limited due to dependence on expensive platinum (Pt)-based electrocatalysts. Here, an all-dry process to transform electrochemically inert bulk WS2 into a multidomain electrochemical catalyst that enables scalable and cost-effective implementation of the hydrogen evolution reaction (HER) in water electrolysis is reported. Direct dry transfer of WS2 flakes to a gold thin film deposited on a silicon substrate provides a general platform to produce the working electrodes for HER with tunable charge transfer resistance...