Chromium Influenced High Magnetic Moment and Half-Metallic Nature of GaN Nanotube.

Density functional theory-based calculations have been performed to analyze the electronic and magnetic properties of chromium doped (6, 0) GaN nanotube. The structural stability of GaN nano-tube has been defined in terms of formation energy, which increases as a function of magnetic impurity (Cr). The study demonstrates that the direct band gap semiconducting GaN nanotube transforms to half-metallic as a function of Cr introduction to GaN. This half metallic nature with high magnetic moment of Cr doped GaN nanotube can be a key parameter for its use in spintronics applications.