Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n(++) Si resistive-switching random access memory devices. The Ni/SiNx/n(++) Si device's Si bottom electrode had a higher dopant concentration (As ion > 10(19) cm(-3)) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 10(18) cm(-3)), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.