Phonon-induced pure-dephasing of luminescence, multiple exciton generation, and fission in silicon clusters.

The size and temperature dependence of the pure-dephasing processes involved in luminescence, multiple exciton generation (MEG), and multiple exciton fission (MEF) are investigated for Sin clusters (n = 5-10, 15) using ab initio molecular dynamics and optical response function theory. The cluster bandgaps correlate with two types of binding energy, indicating that bandgaps can be used to characterize cluster stability. Ranging from 5 to 100 fs, the dephasing times are found to be longest for MEF and shortest for MEG, with luminescence falling in the middle range. Generally, the dephasing is fast, if the orbitals supporting the pair of states involved in the superpositions differ in energy, atomic localization, and number of nodes. The dephasing accelerates with temperature, because more phonon modes are activated, and lower frequency acoustic modes are able to explore the anhamonic part of the potential energy surface. The temperature dependence is stronger for larger clusters, since they possess a wider range of low-frequency anharmonic modes. Our research indicates that rapid dephasing in Si clusters favors generation of independent charge carriers from single and multiple excitons, making the clusters a promising material for photon energy conversion. The simulations of the dephasing processes reported in this work assist in understanding of the exciton evolution pathways in inorganic semiconductor clusters and other nanoscale materials.