Seokje Lee, Muhammad S Abbas, Dongha Yoo, Keundong Lee, Tobiloba G Fabunmi, Eunsu Lee, Han Ik Kim, Imhwan Kim, Daniel Jang, Sangmin Lee, Jusang Lee, Ki-Tae Park, Changgu Lee, Miyoung Kim, Yun Seog Lee, Celesta S Chang, Gyu-Chul Yi
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c -sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off by using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films...
December 5, 2023: Nano Letters