Remadevi Sreeja Sreedharan, Vedachalaiyer Ganesan, Chellappan Pillai Sudarsanakumar, Kaushalkumar Bhavsar, Radhakrishna Prabhu, Vellara Pappukutty Pillai Mahadevan Pillai
Background : Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods : Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy...
2015: Nano Reviews