Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material.

Highly reproducible and precisely controlled gradual variation in optical reflectivity or electrical resistance between amorphous and crystalline phases of phase change (PC) material is a key requirement for multilevel programming. Here we report high-contrast multilevel set and reset operations through accumulative switching in growth-dominated AgInSbTe PC material using a nanosecond laser-based pump-probe technique. The precise tuning of fractions of crystallized or re-amorphized region is achieved by means of controlling the number of irradiated laser pulses enabling six stable multilevels with high-reflectivity contrast of 2% between any two states. Furthermore, Raman spectra of irradiated spots validate the structural changes involved during multilevel switching between amorphous and crystalline phases.