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Solution processed MoO3 interfacial layer for organic photovoltaics prepared by a facile synthesis method.

Seiichiro Murase, Yang Yang
Advanced Materials 2012 May 9
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.

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