1.54 microm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)(3)phen as emitter and Bphen as electron transport material.

1.54 microm Si-anode organic light emitting devices with Er(DBM)(3)phen: Bphen and Bphen/Bphen:Cs(2)CO(3) as the emissive and electron transport layers (the devices are referred to as the Bphen-based devices) have been investigated. In comparison with the AlQ-based devices with the same structure but with AlQ:Er(DBM)(3)Phen and AlQ as the emissive and electron transport layers, the maximum EL intensity and maximum power efficiency from the Bphen-based devices increase by a factor of 3 and 2.2, respectively. The optimized p-Si anode resistivity of the Bphen-based device of 10 Omega.cm is significantly lower than that of the AlQ-based device. The NIR EL improvement can be attributed to the energy transfer from Bphen to the Er complex and equilibrium of electron injection from the Sm/Au cathode and hole injection from the p-Si anode at a higher level.