Add like
Add dislike
Add to saved papers

Phase change characteristics of aluminum doped Ge(2)Sb(2)Te(5) films prepared by magnetron sputtering.

Optics Express 2007 August 21
Aluminum-doped Ge(2)Sb(2)Te(5) (Al(x)GST) films were deposited on Si(100) substrates by co-magnetron sputtering system. The Aluminum concentrations in these films are determined by X-ray photoelectron spectroscopy (XPS). The influence of Al doping upon phase change characteristics of these Al(x)GST alloy films has been investigated by X-ray diffraction (XRD) and a temperature-regulable UVISEL(TM) typed spectroscopic ellipsometry (TRSE). With the augment of Al doping concentration, the crystalline temperatures of Al(x)GST films went up while annealing, and the face-centered-cubic (fcc) phase had high thermal stability. The reflectivity contrast of the films increases obviously, which is effective to improve the signal to noise ratio (SNR) for optical phase-change storage.

Full text links

We have located links that may give you full text access.
Can't access the paper?
Try logging in through your university/institutional subscription. For a smoother one-click institutional access experience, please use our mobile app.

For the best experience, use the Read mobile app

Mobile app image

Get seemless 1-tap access through your institution/university

For the best experience, use the Read mobile app

All material on this website is protected by copyright, Copyright © 1994-2024 by WebMD LLC.
This website also contains material copyrighted by 3rd parties.

By using this service, you agree to our terms of use and privacy policy.

Your Privacy Choices Toggle icon

You can now claim free CME credits for this literature searchClaim now

Get seemless 1-tap access through your institution/university

For the best experience, use the Read mobile app