LingNan Wei, Qiaoling Xu, Yangchen He, Qingxin Li, Yan Huang, Wang Zhu, Kenji Watanabe, Takashi Taniguchi, Martin Claassen, Daniel A Rhodes, Dante M Kennes, Lede Xian, Angel Rubio, Lei Wang
Different mechanisms driving a linear temperature dependence of the resistivity ρ ∼ T at van Hove singularities (VHSs) or metal-insulator transitions when doping a Mott insulator are being debated intensively with competing theoretical proposals. We experimentally investigate this using the exceptional tunability of twisted bilayer (TB) WSe2 by tracking the parameter regions where linear-in- T resistivity is found in dependency of displacement fields, filling, and magnetic fields. We find that even when the VHSs are tuned rather far away from the half-filling point and the Mott insulating transition is absent, the T -linear resistivity persists at the VHSs...
April 16, 2024: Proceedings of the National Academy of Sciences of the United States of America