Hua Yu, Liangfeng Huang, Lanying Zhou, Yaling Peng, Xiuzhen Li, Peng Yin, Jiaojiao Zhao, Mingtong Zhu, Shuopei Wang, Jieying Liu, Hongyue Du, Jian Tang, Songge Zhang, Yuchao Zhou, Nianpeng Lu, Kaihui Liu, Na Li, Guangyu Zhang
Large-scale, high-quality, and uniform monolayer MoS2 films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and has been demonstrated at a wafer scale up to 4-inch. In this study, we report the epitaxial growth of 8-inch wafer-scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-inch wafer-scale monolayer MoS2 film were fabricated and exhibited high performances, with an average mobility and an on/off ratio of 53...
April 29, 2024: Advanced Materials