Yuanda Liu, Yaze Wu, Ruihuan Duan, Jichao Fu, Martin Ovesen, Samuel Chang En Lai, Think-E Yeo, Jing Yee Chee, Yunjie Chen, Siew Lang Teo, Hui Ru Tan, Wang Zhang, Joel K W Yang, Kristian Sommer Thygesen, Zheng Liu, Yong-Wei Zhang, Jinghua Teng
The advent of 2D ferroelectrics, characterized by their spontaneous polarization states in layer-by-layer domains without the limitation of a finite size effect, brings enormous promise for applications in integrated optoelectronic devices. Comparing with semiconductor/insulator devices, ferroelectric devices show natural advantages such as non-volatility, low energy consumption and high response speed. Several 2D ferrelectric materials have been reported, however, the device implementation particularly for optoelectronic application remains largely hypothetical...
May 15, 2024: Advanced Materials