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Matthew E Cryer, Jonathan E Halpert
Quantum dots (QDs) are now well established as promising materials for room temperature mid-infrared (MIR) detection beyond 3 μm. Here, we have replaced commonly reported mercury based quantum dots with less toxic SnTe and PbSnTe. Inverse MIR detection at room temperature is demonstrated with planar, solution, and air-processed PbSnTe and SnTe QD devices. The detection mechanism is shown to be mediated by an interaction between MIR radiation and the vibrational stretches of adsorbed hydroxyl species. Devices are shown to possess mA/W responsivity via a reduction in conductance due to MIR irradiation and, unlike classic MIR photoconductors, are unaffected by visible wavelengths...
October 26, 2018: ACS Sensors
Y Nishijima, K Shinohara
A Pb(1-x)Sn(x)Te single-mode laser with a buried heterostructure has been developed by use of a two-step liquid-phase epitaxial growth. The active-layer size was calculated for fundamental transverse-mode operation. Tin diffusion was simulated in the active layer during the second growth step, and the results were used to select the optimum growth temperature. Analysis of the crystal-growth mechanism in the buried-heterostructure formation enabled us to develop a new growth method. The laser we developed showed single-mode operation with a wavelength of 8 µm and a power of 1...
August 20, 1993: Applied Optics
D Handelman, A Hardy, A Katzir
No abstract text is available yet for this article.
January 1, 1987: Applied Optics
M Uchida, K Nagasaka, H Tashiro
The injection effect of weak Stokes seed radiation is demonstrated in a para-H(2) Raman laser. Injected radiation from a PbSnTe diode laser as low as several microwatts resulted in an enhancement of 4 orders of magnitude in the output Stokes energy and a reduction in the pumping threshold energy of 22%. Characteristics of the injection are investigated as functions of the pumping energy, the Stokes seed frequency, and the polarization.
December 15, 1989: Optics Letters
H Tashiro, T Koizumi, K Toyoda, S Namba
An optically pumped amplifier of high-pressure NH(3) has been successfully applied to wide-range amplification of a PbSnTe tunable-diode laser. A continuously broadened gain width of more than 20 GHz was achieved with a NH(3)-He mixture.
July 1, 1984: Optics Letters
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