Maoliang Wei, Kai Xu, Bo Tang, Junying Li, Yiting Yun, Peng Zhang, Yingchun Wu, Kangjian Bao, Kunhao Lei, Zequn Chen, Hui Ma, Chunlei Sun, Ruonan Liu, Ming Li, Lan Li, Hongtao Lin
Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2 Se3 and Ge2 Sb2 Se4 Te1 , were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption...
March 30, 2024: Nature Communications