Yudai Yamaguchi, Yuta Inaba, Ryoji Arai, Yuya Kanitani, Yoshihiro Kudo, Michinori Shiomi, Daiji Kasahara, Mikihiro Yokozeki, Noriyuki Fuutagawa, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, Kouichi Akahane, Naokatsu Yamamoto, Shigetaka Tomiya
Self-assembled quantum dots (QDs) are potential candidates for photoelectric and photovoltaic devices, because of their discrete energy levels. The characterization of QDs at the atomic level using a multimodal approach is crucial to improving device performance because QDs are nanostructures with highly correlated structural parameters. In this study, scanning transmission electron microscopy, geometric phase analysis, and atom probe tomography were employed to characterize structural parameters such as the shape, strain, and composition of self-assembled InAs-QDs with InGaAlAs spacer layers...
March 29, 2024: Journal of Physical Chemistry Letters