Robert Winkler, Alexander Zintler, Oscar Recalde-Benitez, Tianshu Jiang, Déspina Nasiou, Esmaeil Adabifiroozjaei, Philipp Schreyer, Taewook Kim, Eszter Piros, Nico Kaiser, Tobias Vogel, Stefan Petzold, Lambert Alff, Leopoldo Molina-Luna
Transition metal oxide dielectric layers have emerged as promising candidates for various relevant applications, such as supercapacitors or memory applications. However, the performance and reliability of these devices can critically depend on their microstructure, which can be strongly influenced by thermal processing and substrate-induced strain. To gain a more in-depth understanding of the microstructural changes, we conducted in situ transmission electron microscopy (TEM) studies of amorphous HfO2 dielectric layers grown on highly textured (111) substrates...
February 6, 2024: Nano Letters