Kunmo Koo, Joon Ha Chang, Sanghyeon Ji, Hyuk Choi, Seunghee H Cho, Seung Jo Yoo, Jacob Choe, Hyo San Lee, Sang Won Bae, Jung Min Oh, Hee Suk Woo, Seungmin Shin, Kuntack Lee, Tae-Hong Kim, Yeon Sik Jung, Ji-Hwan Kwon, Ju Hyeok Lee, Yoon Huh, Sung Kang, Hyun You Kim, Jong Min Yuk
Modern semiconductor fabrication is challenged by difficulties in overcoming physical and chemical constraints. A major challenge is the wet etching of dummy gate silicon, which involves the removal of materials inside confined spaces of a few nanometers. These chemical processes are significantly different in the nanoscale and bulk. Previously, electrical double-layer formation, bubble entrapment, poor wettability, and insoluble intermediate precipitation have been proposed. However, the exact suppression mechanisms remain unclear due to the lack of direct observation methods...
April 1, 2024: Nano Letters