Photodetector

The separation of photogenerated electron-hole pairs is crucial for the construction of high-performance and wide-band responsive photodetectors. The type-I heterojunction as a photodetector is seldomly studied due to its limited separation of the carriers and narrow optical response. In this work, we demonstrated that the high performance of type-I heterojunction as a broadband photodetector can be obtained by rational design of the band alignment and proper modulation from external electric field. The heterojunction device is fabricated by vertical stacking of non-layered MnS and WSe2 flakes...

We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons in its collection layer will gradually reach their peak velocity with the growing incident light power. Moreover, as the incident light intensity increases, the differential capacitance also declines, thus the total bandwidth grows. It will make the MUTC-PD achieve high-speed and high-power response performance simultaneously...

Remote sensing technology, which conventionally employs spectrometers to capture hyperspectral images, allowing for the classification and unmixing based on the reflectance spectrum, has been extensively applied in diverse fields, including environmental monitoring, land resource management, and agriculture. However, miniaturization of remote sensing systems remains a challenge due to the complicated and dispersive optical components of spectrometers. Here, m-phase GaTe0.5 Se0.5 with wide-spectral photoresponses (250-1064 nm) and stack it with WSe2 are utilizes to construct a two-dimensional van der Waals heterojunction (2D-vdWH), enabling the design of a gate-tunable wide-spectral photodetector...

Colloidal quantum dots (CQDs) are of interest for optoelectronic devices because of the possibility of high-throughput solution processing and the wide energy gap tunability from ultraviolet to infrared wavelengths. People may question about the upper limit on the CQD wavelength region. To date, although the CQD absorption already reaches terahertz, the practical photodetection wavelength is limited within mid-wave infrared. To figure out challenges on CQD photoresponse in longer wavelength, would reveal the ultimate property on these nanomaterials...

Solar-blind photodetectors based on wide bandgap semiconductors have recently attracted a lot of interest. Nickel-containing spinel phase oxides, such as NiAl2 O4 , are stable p-type semiconductors. This paper describes a multifunctional solar-blind photodetector based on a NiAl2 O4 /4H-SiC heterojunction that utilizes photovoltaic effects. The position sensitivity reaches a value of 1589.7 mV/mm under 405 nm laser illumination, while the relaxation times of vertical photovoltaic (VPV) effect and lateral photovoltaic (LPV) effect under 266 nm laser illumination are only 0...

A high-performance planar structure metal-semiconductor-metal-type solar-blind photodetector (SBPD) was fabricated on the basis of (010)-plane β-Ga2 O3 thermally oxidized from nonpolar (110)-plane GaN. A full width at half maximum of 0.486° was achieved for the X-ray rocking curve associated with (020)-plane β-Ga2 O3 , which is better than most reported results for the heteroepitaxially grown (-201)-plane β-Ga2 O3 . As a result of the relatively high crystalline quality, a dark current as low as 6...

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are excellent candidates for high-performance optoelectronics due to their high carrier mobility, air stability and strong optical absorption. However, photodetectors made with monolayer TMDs often exhibit a high dark current, and thus, there is a scope for further improvement. Herein, we developed a 2D bilayer tungsten disulfide (WS2 ) based photodetector (PD) with asymmetric contacts that exhibits an exceptionally low dark current and high specific detectivity...

Broadband photodetectors have drawn intensive attention owing to their wide application prospects in optical communication, imaging, astronomy, and so on. Two-dimensional transition-metal dichalcogenides (TMDs) are considered as highly potential candidates for photodetection applications, benefiting from their excellent photoelectric properties. However, most of the photodetectors based on TMDs suffer from low performance in the near-infrared (NIR) region due to the weak optical absorption efficiency near their absorption band edge, which severely constrains their usage for broadband optoelectronics...

All-solution-processed organic optoelectronic devices can enable the large-scale manufacture of ultrathin wearable electronics with integrated diverse functions. However, the complex multilayer-stacking device structure of organic optoelectronics poses challenges for scalable production. Here, we establish all-solution processes to fabricate a wearable, self-powered photoplethysmogram (PPG) sensor. We achieve comparable performance and improved stability compared to complex reference devices with evaporated electrodes by using a trilayer device structure applicable to organic photovoltaics, photodetectors, and light-emitting diodes...

This study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 by nitrogen, the surface state (Nss) increases thereby increasing responsivity. The mathematical model included in the paper supports the relation of photocurrent gain and its dependency on trap level which states that the increasing the trap density increases the photocurrent gain and the same is observed experimentally...

Releasing pre-strained two-dimensional nanomembranes to assemble on-chip three-dimensional devices is crucial for upcoming advanced electronic and optoelectronic applications. However, the release process is affected by many unclear factors, hindering the transition from laboratory to industrial applications. Here, we propose a quasistatic multilevel finite element modeling to assemble three-dimensional structures from two-dimensional nanomembranes and offer verification results by various bilayer nanomembranes...

Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2 , show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity...

2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size...

W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol-gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p-n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current-voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range...

Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum...

All-inorganic perovskites have garnered significant attention in optoelectronics. Herein, square CsPb2 Br5 nanosheets, with lateral dimensions of up to 200 μm and a thickness of less than 50 nm, were successfully synthesized via a straightforward aqueous method using HBr as a morphology-tailoring agent. A photodetector composed of a single nanosheet was subsequently fabricated and exhibited remarkable photodetection capabilities, demonstrating a detectivity of 5.98 × 109 Jones. These findings offer new perspectives on the synthesis and utilization of CsPb2 Br5 and other perovskite nanostructures in optoelectronic devices...

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs)...

Colloidal quantum dot (CQD) infrared (IR) photodetectors can be fabricated and operated with larger spectral tunability, fewer limitations in terms of cooling requirements and substrate lattice matching, and at a potentially lower cost than detectors based on traditional bulk materials. Silver selenide (Ag2 Se) has emerged as a promising sustainable alternative to current state-of-the-art toxic semiconductors based on lead, cadmium, and mercury operating in the IR. However, an impeding gap in available absorption bandwidth for Ag2 Se CQDs exists in the short-wave infrared (SWIR) region due to degenerate doping by the environment, switching the CQDs from intrinsic interband semiconductors in the near-infrared (NIR) to intraband absorbing CQDs in the mid-wave infrared (MWIR)...

Perovskite thin films are at the forefront of highly promising photovoltaic technologies due to their remarkable optoelectronic properties. Herein, we explore a low-cost, reproducible, and industry-scalable methodology to synthesize an all-inorganic CsPbI1.5 Br1.5 perovskite thin film with additional incorporation of copper and chloride ions into the lattice structure. The synthesis process involves chemical bath deposition of PbS, followed by a gas-solid iodination reaction to yield PbI2 . Subsequently, dip-coating incorporates Cs+ , Cu2+ , Br- , and Cl- ions into PbI2 , and annealing at 270 °C produces perovskite thin films...

The analysis of optical spectra-emission or absorption-has been arguably the most powerful approach for discovering and understanding matter. The invention and development of many kinds of spectrometers have equipped us with versatile yet ultra-sensitive diagnostic tools for trace gas detection, isotope analysis, and resolving hyperfine structures of atoms and molecules. With proliferating data and information, urgent and demanding requirements have been placed today on spectrum analysis with ever-increasing spectral bandwidth and frequency resolution...