keyword
https://read.qxmd.com/read/38475152/a-2-4-ghz-wide-range-cmos-current-mode-class-d-pa-with-hd2-suppression-for-internet-of-things-applications
#1
JOURNAL ARTICLE
Nam-Seog Kim
Short-range Internet of Things (IoT) sensor nodes operating at 2.4 GHz must provide ubiquitous wireless sensor networks (WSNs) with energy-efficient, wide-range output power (POUT). They must also be fully integrated on a single chip for wireless body area networks (WBANs) and wireless personal area networks (WPANs) using low-power Bluetooth (BLE) and Zigbee standards. The proposed fully integrated transmitter (TX) utilizes a digitally controllable current-mode class-D (CMCD) power amplifier (PA) with a second harmonic distortion (HD2) suppression to reduce VCO pulling in an integrated system while meeting harmonic limit regulations...
March 1, 2024: Sensors
https://read.qxmd.com/read/38297727/highly-reflective-facet-coated-multi-wavelength-dfb-laser-array-with-exact-wavelength-spacings
#2
JOURNAL ARTICLE
Ling Wang, Gen Lv, Yaqiang Fan, Kaifei Tang, Zhenxing Sun, Yangyang Gong, Xiangfei Chen, Yi-Jen Chiu, Rulei Xiao, Yating Zhou
A distributed feedback (DFB) laser array of twenty wavelengths with highly reflective and anti-reflective (HR-AR) coated facets is both theoretically analyzed and experimentally validated. While the HR facet coating enhances high wall-plug efficiency, it inadvertently introduces a random facet grating phase, thereby compromising the lasing wavelength's predictability and the stability of the single-longitudinal-mode (SLM). In this study, two key advancements are introduced: first, the precisely spaced wavelength is achieved with an error of within ±0...
January 15, 2024: Optics Express
https://read.qxmd.com/read/38138398/performance-investigations-of-inas-inp-quantum-dash-semiconductor-optical-amplifiers-with-different-numbers-of-dash-layers
#3
JOURNAL ARTICLE
Youxin Mao, Xiaoran Xie, Chunying Song, Zhenguo Lu, Philip J Poole, Jiaren Liu, Mia Toreja, Yang Qi, Guocheng Liu, Pedro Barrios, Daniel Poitras, John Weber, Ping Zhao, Martin Vachon, Mohamed Rahim, Penghui Ma, Silas Chen, Ahmad Atieh
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18...
December 12, 2023: Micromachines
https://read.qxmd.com/read/38067975/stability-mounting-and-measurement-considerations-for-high-power-gan-mmic-amplifiers
#4
JOURNAL ARTICLE
Vicente González-Posadas, José Luis Jiménez-Martín, Angel Parra-Cerrada, David Espinosa Adams, Wilmar Hernandez
In this paper, the precise design of a high-power amplifier (HPA) is shown, along with the problems associated with the stability of "on-wafer" measurements. Here, techniques to predict possible oscillations are discussed to ensure the stability of a monolithic microwave-integrated circuit (MMIC). In addition, a deep reflection is made on the instabilities that occur when measuring both on wafer and using a mounted chip. Stability techniques are used as tools to characterize measurement results. Both a precise design and instabilities are shown through the design of a three-stage X-band HPA in gallium nitride (GaN) from the WIN Semiconductors Corp...
December 4, 2023: Sensors
https://read.qxmd.com/read/38049625/experimental-results-on-nonlinear-distortion-compensation-using-photonic-reservoir-computing-with-a-single-set-of-weights-for-different-wavelengths
#5
JOURNAL ARTICLE
Emmanuel Gooskens, Stijn Sackesyn, Joni Dambre, Peter Bienstman
Photonics-based computing approaches in combination with wavelength division multiplexing offer a potential solution to modern data and bandwidth needs. This paper experimentally takes an important step towards wavelength division multiplexing in an integrated waveguide-based photonic reservoir computing platform by using a single set of readout weights for up to at least 3 ITU-T channels to efficiently scale the data bandwidth when processing a nonlinear signal equalization task on a 28 Gbps modulated on-off keying signal...
December 4, 2023: Scientific Reports
https://read.qxmd.com/read/38004926/the-design-of-a-1-6-ghz-broadband-double-balanced-mixer
#6
JOURNAL ARTICLE
Yujun Wang, Jianglai Tian, Bo Wang, Lixi Wan, Zhi Jin
This brief proposes a 1-6 GHz broadband double-balanced mixer. On the basis of the standard Marchand balun mixer, two techniques to enhance the performance of the mixer are proposed. Firstly, by loading capacitors, the amplitude and phase imbalance of the balun at high frequencies are improved, thereby expanding the relative bandwidth of the mixer by 0.1. Secondly, by cascading a first-order LC filter at the intermediate-frequency (IF) port, the leakage of radio frequency (RF) and local oscillator (LO) signals at the IF port is reduced by approximately 8 dB and 7 dB, respectively...
November 7, 2023: Micromachines
https://read.qxmd.com/read/38004852/design-of-power-amplifiers-for-bds-3-terminal-based-on-ingap-gaas-hbt-mmic-and-lga-technology
#7
JOURNAL ARTICLE
Zhenbing Li, Junjie Huang, Jinrong Zhang, Shilin Jia, Haoyang Sun, Gang Li, Guangjun Wen
With the development and popularization of the Beidou-3 navigation satellite system (BDS-3), to ensure its unique short message function, it is necessary to integrate a radio frequency (RF) transmitting circuit with high performance in the BDS-3 terminal. As the key device in an RF transmitting circuit, the RF power amplifier (PA) largely determines the comprehensive performance of the circuit with its transmission power, efficiency, linearity, and integration. Therefore, in this paper, an L-band highly integrated PA chip compatible with 3 W and 5 W output power is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, analog pre-distortion technology, temperature-insensitive adaptive power detection technology, and land grid array (LGA) packaging technology...
October 27, 2023: Micromachines
https://read.qxmd.com/read/37996612/a-compact-sige-d-band-power-amplifier-for-scalable-photonic-enabled-phased-antenna-arrays
#8
JOURNAL ARTICLE
Reinier Broucke, Nishant Singh, Michiel Van Osta, Joris Van Kerrebrouck, Piet Demeester, Sam Lemey, Guy Torfs
To address the rising demand for high-speed wireless data links, communication systems operating at frequencies beyond [Formula: see text] are being targeted. A key enabling technology in the development of these wireless systems is the phased antenna array. Yet, the design and implementation of such steerable antenna arrays at frequencies over [Formula: see text] comes with a multitude of challenges. In particular, the cointegration of active electronics at each antenna element poses a major hurdle due to the inherent space constraints in the array...
November 23, 2023: Scientific Reports
https://read.qxmd.com/read/37910762/on-chip-er-doped-ta-2-o-5-waveguide-amplifiers-with-a-high-internal-net-gain
#9
JOURNAL ARTICLE
Zheng Zhang, Ruixue Liu, Wei Wang, Kunlun Yan, Zhen Yang, Maozhuang Song, Duanduan Wu, Peipeng Xu, Xunsi Wang, Rongping Wang
We designed and fabricated a double-layered structure Er3+ :Ta2 O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533 nm was 2.5 mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1 mW at 980 nm and signal input power of -30.0 dBm (1 µW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10...
November 1, 2023: Optics Letters
https://read.qxmd.com/read/37710507/simultaneous-enhancement-of-the-bandwidth-and-responsivity-in-high-speed-avalanche-photodiodes-with-an-optimized-flip-chip-bonding-package
#10
JOURNAL ARTICLE
Naseem, Nan-Wei Chen, Syed Hasan Parvez, Zohauddin Ahmad, Sean Yang, H-S Chen, Hsiang-Szu Chang, Jack Jia-Sheng Huang, Jin-Wei Shi
The enhancement in responsivity of photodiodes (PDs) or avalanche photodiodes (APDs) with the traditional flip-chip bonding package usually comes at the expense of degradation in the optical-to-electrical (O-E) bandwidth due to the increase of parasitic capacitance. In this work, we demonstrate backside-illuminated In0.52 Al0.48 As based APDs with novel flip-chip bonding packaging designed to relax this fundamental trade-off. The inductance induced peak in the measured O-E frequency response of these well-designed and well-packaged APDs, which can be observed around its 3-dB bandwidth (∼30 GHz), effectively widens the bandwidth and becomes more pronounced when the active diameter of the APD is aggressively downscaled to as small as 3 µm...
July 31, 2023: Optics Express
https://read.qxmd.com/read/37710436/120-gbaud-16-qam-silicon-photonics-iq-modulator-for-data-center-interconnection
#11
JOURNAL ARTICLE
Jian Wang, Mustafa Al-Qadi, Wen-Jr Jiang, Kangmei Li, You-Wei Chen, Konstantin Kuzmin, Calvin Ho, Yan Yang Zhao, Hiroaki Yamada, Jason Ackert, David Dougherty, Weilin Liu, Chengkun Chen, Yifeng Zhou, Ping Wang, Xu Liu, Kevin Schmidt, Jocelyn Nee, Kenneth A McGreer, Marcel Boudreau, Jibin Sun, Winston I Way, Hui Xu
We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of -18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA...
July 31, 2023: Optics Express
https://read.qxmd.com/read/37658342/effect-of-three-different-grafting-materials-on-immediate-implant-placement-using-vestibular-socket-therapy-in-class-ii-extraction-sockets-in-the-maxillary-esthetic-zone-a-randomized-controlled-clinical-trial
#12
RANDOMIZED CONTROLLED TRIAL
Mohamed Mofreh Hamed, Maher Mohamed El-Tonsy, Abdelsalam Elaskary, Gaser O Abdelaziz, Safinaz Saleh Saeed, Bassem Nabil Elfahl
BACKGROUND: This study compared the effectiveness of three bone grafting materials used for treating class II fresh extraction sockets in the esthetic zone with immediate implant placement using Vestibular Socket Therapy (VST) to evaluate the pink esthetic score (PES), peri-implant mucosal levels (PML), and facial bone thickness (FBT). METHODS: Twenty-four surgical sites in the maxillary anterior region presented with type II socket defects received immediate implants and simultaneous bone grafting with either a collagen plug soaked in blood, demineralized bone matrix Grafton, or a particulate mixture of 2/3 autogenous bone chips and 1/3 deproteinized bovine bone mineral MinerOss X...
September 1, 2023: BMC Oral Health
https://read.qxmd.com/read/37514704/miniature-integrated-2-4-ghz-rectennas-using-novel-tunnel-diodes
#13
JOURNAL ARTICLE
Christopher Walsh, Saad G Muttlak, Mohammadreza Sadeghi, Mohamed Missous
This work presents the design, fabrication, and measured results of a fully integrated miniature rectenna using a novel tunnel diode known as the Asymmetrical Spacer Layer Tunnel (ASPAT). The term rectenna is an abbreviation for a rectifying antenna, a device with a rectifier and antenna coexisting as a single design. The ASPAT is the centrepiece of the rectifier used for its strong temperature independence, zero bias, and high dynamic range. The antenna is designed to be impedance matched with the rectifier, eliminating the need for a matching network and saving valuable real estate on the gallium arsenide (GaAs) substrate...
July 14, 2023: Sensors
https://read.qxmd.com/read/37514670/a-ku-band-gan-on-si-mmic-power-amplifier-with-an-asymmetrical-output-combiner
#14
JOURNAL ARTICLE
Javier Del Pino, Sunil Lalchand Khemchandani, Daniel Mayor-Duarte, Mario San-Miguel-Montesdeoca, Sergio Mateos-Angulo, Francisco de Arriba, María García
In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner...
July 13, 2023: Sensors
https://read.qxmd.com/read/37421100/design-of-a-compact-analog-complex-correlator-for-millimeter-wave-radiation-temperature-measurement-system
#15
JOURNAL ARTICLE
Wangdong He, Anyong Hu, Chen Dong, Xi Chen, Jianhao Gong, Jungang Miao
Human body temperature is a fundamental physiological sign that reflects the state of physical health. It is important to achieve high-accuracy detection for non-contact human body temperature measurement. In this article, a Ka band (32 to 36 GHz) analog complex correlator using the integrated six-port chip is proposed, and a millimeter-wave thermometer system based on the designed correlator is completed for human body temperature measurement. The designed correlator utilizes the six-port technique to achieve large bandwidth and high sensitivity, and miniaturization of the correlator is achieved through an integrated six-port chip...
April 17, 2023: Micromachines
https://read.qxmd.com/read/37374861/a-ku-band-broadband-stacked-fet-power-amplifier-using-0-15-%C3%AE-m-gaas-phemt
#16
JOURNAL ARTICLE
Jiaxuan Li, Yang Yuan, Bin Yuan, Jingxin Fan, Jialong Zeng, Zhongjun Yu
To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively...
June 20, 2023: Micromachines
https://read.qxmd.com/read/37241633/a-low-phase-noise-8-ghz-linear-band-sub-millimeter-wave-phase-locked-loop-in-22-nm-fd-soi-cmos
#17
JOURNAL ARTICLE
Mamady Kebe, Mihai Sanduleanu
Low-phase noise and wideband phased-locked loops (PLLs) are crucial for high-data rate communication and imaging systems. Sub-millimeter-wave (sub-mm-wave) PLLs typically exhibit poor performance in terms of noise and bandwidth due to higher device parasitic capacitances, among other reasons. In this regard, a low-phase-noise, wideband, integer-N, type-II phase-locked loop was implemented in the 22 nm FD-SOI CMOS process. The proposed wideband linear differential tuning I/Q voltage-controlled oscillator (VCO) achieves an overall frequency range of 157...
May 8, 2023: Micromachines
https://read.qxmd.com/read/37132921/high-overall-performance-uni-traveling-carrier-photodiodes-for-sub-thz-wave-generation
#18
JOURNAL ARTICLE
Jianwei Chen, Ran Hao, Zheng Zhen, Huaqing Jiang, Kaida Tang, Chenyuan Chen, Shangzhong Jin
Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the -2 V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail...
March 1, 2023: Applied Optics
https://read.qxmd.com/read/37022891/an-ingestible-pill-with-cmos-fluorescence-sensor-array-bi-directional-wireless-interface-and-packaged-optics-for-in-vivo-bio-molecular-sensing
#19
JOURNAL ARTICLE
Chengjie Zhu, Yuhan Wen, Tao Liu, Haw Yang, Kaushik Sengupta
The paper presents for the first time a pill-based ingestible electronics with CMOS integrated multiplexed fluorescence bio-molecular sensor arrays, bi-directional wireless communication and packaged optics in a FDA-approved capsule for in-vivo bio-molecular sensing. The silicon chip integrates both the sensor array, and the ultra-low-power (ULP) wireless system that allows offloading sensor computing to an external base station that can reconfigure the sensor measurement time, and its dynamic range, allowing optimized high sensitivity measurement under low power consumption...
February 13, 2023: IEEE Transactions on Biomedical Circuits and Systems
https://read.qxmd.com/read/36838092/cmos-radio-frequency-energy-harvester-rfeh-with-fully-on-chip-tunable-voltage-booster-for-wideband-sensitivity-enhancement
#20
JOURNAL ARTICLE
Yizhi Li, Jagadheswaran Rajendran, Selvakumar Mariappan, Arvind Singh Rawat, Sofiyah Sal Hamid, Narendra Kumar, Masuri Othman, Arokia Nathan
Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity. However, the bandwidth in which its sensitivity is maintained is very poor...
February 4, 2023: Micromachines
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