Hossein Roshan, Dongxu Zhu, Davide Piccinotti, Jinfei Dai, Manuela De Franco, Matteo Barelli, Mirko Prato, Luca De Trizio, Liberato Manna, Francesco Di Stasio
Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13...
April 15, 2024: Advanced Science (Weinheim, Baden-Wurttemberg, Germany)